Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

Research output: Contribution to journal › Journal article › Research › peer-review

Standard

Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface. / Andresen, S.E.; Sørensen, B.S.; Lindelof, P.E.; Sadowski, J.; Guertler, C.M.; Bland, J.A.C.; Rasmussen, Finn Berg.

In: Journal of Applied Physics, Vol. 94, No. 6, 15.09.2003, p. 3990-3994.

Research output: Contribution to journal › Journal article › Research › peer-review

Harvard

Andresen, SE, Sørensen, BS, Lindelof, PE, Sadowski, J, Guertler, CM, Bland, JAC & Rasmussen, FB 2003, 'Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface', Journal of Applied Physics, vol. 94, no. 6, pp. 3990-3994. https://doi.org/10.1063/1.1602945

APA

Andresen, S. E., Sørensen, B. S., Lindelof, P. E., Sadowski, J., Guertler, C. M., Bland, J. A. C., & Rasmussen, F. B. (2003). Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface. Journal of Applied Physics, 94(6), 3990-3994. https://doi.org/10.1063/1.1602945

Vancouver

Andresen SE, Sørensen BS, Lindelof PE, Sadowski J, Guertler CM, Bland JAC et al. Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface. Journal of Applied Physics. 2003 Sep 15;94(6):3990-3994. https://doi.org/10.1063/1.1602945

Author

Andresen, S.E. ; Sørensen, B.S. ; Lindelof, P.E. ; Sadowski, J. ; Guertler, C.M. ; Bland, J.A.C. ; Rasmussen, Finn Berg. / Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface. In: Journal of Applied Physics. 2003 ; Vol. 94, No. 6. pp. 3990-3994.

Bibtex

@article{7505fba074c411dbbee902004c4f4f50,
title = "Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface",
abstract = "Spin-polarized electron coupling across a Si delta-doped GaMnAs/n-GaAs interface was investigated. The injection of spin-polarized electrons was detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode. The angular momentum selection rules were simplified by the strain-induced heavy-hole/light-hole splitting.",
keywords = "Faculty of Science, Nano electronics",
author = "S.E. Andresen and B.S. S{\o}rensen and P.E. Lindelof and J. Sadowski and C.M. Guertler and J.A.C. Bland and Rasmussen, {Finn Berg}",
year = "2003",
month = sep,
day = "15",
doi = "10.1063/1.1602945",
language = "English",
volume = "94",
pages = "3990--3994",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics",
number = "6",

}

RIS

TY - JOUR

T1 - Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

AU - Andresen, S.E.

AU - Sørensen, B.S.

AU - Lindelof, P.E.

AU - Sadowski, J.

AU - Guertler, C.M.

AU - Bland, J.A.C.

AU - Rasmussen, Finn Berg

PY - 2003/9/15

Y1 - 2003/9/15

N2 - Spin-polarized electron coupling across a Si delta-doped GaMnAs/n-GaAs interface was investigated. The injection of spin-polarized electrons was detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode. The angular momentum selection rules were simplified by the strain-induced heavy-hole/light-hole splitting.

AB - Spin-polarized electron coupling across a Si delta-doped GaMnAs/n-GaAs interface was investigated. The injection of spin-polarized electrons was detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode. The angular momentum selection rules were simplified by the strain-induced heavy-hole/light-hole splitting.

KW - Faculty of Science

KW - Nano electronics

UR - http://www.scopus.com/inward/record.url?scp=0141886914&partnerID=8YFLogxK

U2 - 10.1063/1.1602945

DO - 10.1063/1.1602945

M3 - Journal article

AN - SCOPUS:0141886914

VL - 94

SP - 3990

EP - 3994

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 6

ER -

ID: 113616